Hahn, CK Kim, EK Jeun, IS Kim, KM Kim, MS Min, SK Park, JH 2024-01-21T19:13:04Z 2024-01-21T19:13:04Z 2021-09-05 1996-10 0374-4884 https://pubs.kist.re.kr/handle/201004/144293 In0.5Ga0.5As quantum wires (QWR) and quantum dots (QD) are formed directly on GaAs (311)A and (100) substrates by the molecular beam epitaxy (MBE) technique. The growth mode transition from a 2-dimensional to a 3-dimensional structure is confirmed by the reflection high energy electron diffraction (RHEED) method. Atomic force microscopy (AFM) reveals that the base width of the QWR grown on GaAs(100) substrate is about 20 similar to 25 nm, which is about 5 nm smaller than that of the QWR grown on GaAs (311)A under the same growth conditions. Also, QD structures are grown on GaAs(100) substrates. The optical properties of the quantum dot structures are observed with photoluminescence(PL) measurements and the PL peaks of the QD's are detected at 1.251 eV and 1.326 eV. English KOREAN PHYSICAL SOC GROWTH PHOTOLUMINESCENCE FABRICATION Self-assembled quantum structures deposited by molecular beam epitaxy on GaAs (100) and (311)A substrates Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.5, pp.624 - 627 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 29 5 624 627 scie scopus A1996VM66300013 2-s2.0-0000645461 Physics, Multidisciplinary Physics Article GROWTH PHOTOLUMINESCENCE FABRICATION self assembled quantum structure