Lee, S Chung, B Ko, TY Cho, H Jeon, D Lee, KR Yun, CE 2024-01-21T19:16:00Z 2024-01-21T19:16:00Z 2021-09-04 1996-09 1155-4339 https://pubs.kist.re.kr/handle/201004/144344 Field emission from diamond-like-carbon (DLC) films grown on a silicon substrate has been investigated. The films were prepared using radio-frequency plasma-assisted chemical vapor deposition. A DLC film incorporated with nitrogen exhibited better emission characteristics. For both nitrogen-incorporated and pure DLC, electric are between the film and anode drastically enhanced the emission current. Analysis showed that the are induced the formation of silicon carbide and the change in the surface morphology. The possible mechanism of the enhanced emission is discussed. English EDITIONS PHYSIQUE Field emission from pure and nitrogen-incorporated diamond-like-carbon films Article 10.1051/jp4:1996514 1 JOURNAL DE PHYSIQUE IV, v.6, no.C5, pp.91 - 95 JOURNAL DE PHYSIQUE IV 6 C5 91 95 scie scopus A1996WF80000017 2-s2.0-5344227648 Physics, Multidisciplinary Physics Article; Proceedings Paper DLC