Song, MH Lee, YH Hahn, TS Oh, MH Yoon, KH 2024-01-21T19:16:14Z 2024-01-21T19:16:14Z 2021-09-01 1996-09 0022-0248 https://pubs.kist.re.kr/handle/201004/144348 We investigated the effects of a SiOxNy interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low de field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness. English ELSEVIER SCIENCE BV DISPLAY Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices Article 10.1016/0022-0248(96)00234-5 1 JOURNAL OF CRYSTAL GROWTH, v.167, no.1-2, pp.157 - 164 JOURNAL OF CRYSTAL GROWTH 167 1-2 157 164 scie scopus A1996VN61500020 2-s2.0-0030565268 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article DISPLAY