Han, SH Kim, HD Lee, Y Lee, J Kim, SG 2024-01-21T19:31:25Z 2024-01-21T19:31:25Z 2022-01-10 1996-08 0257-8972 https://pubs.kist.re.kr/handle/201004/144372 Plasma source ion implantation (PSII) has been under extensive research as an innovative technique for ion implantation of three-dimensional objects. A PSII device has been built and used to study nitrogen, carbon and oxygen ion implantation into Ti-6Al-4V orthopaedic alloy. The r.f. plasma generated using an antenna located inside the vacuum chamber was measured to have densities of 10(9)-10(10) cm(-3) at 0.5 m Torr for neutral pressure. The target bias voltage and current during implantation were monitored with a voltage divider and a current transformer. The bias voltage was found to have a rise time of about 5 mu s and flatness over the pulse width of 20 mu s. The Auger analysis of the implanted samples was shown to have depth distributions typical for ion implantation and the implanted layers were found to have undergone chemical state changes. The implantation time dependences were different for nitrogen, carbon and oxygen ion implantation. The implanted samples showed higher hardnesses especially at low loads in the order of oxygen, nitrogen and carbon ion implantation. English ELSEVIER SCIENCE SA LAUSANNE SURFACE MODIFICATION METALS CARBIDES WEAR Plasma source ion implantation of nitrogen, carbon and oxygen into Ti-6Al-4V alloy Article 10.1016/0257-8972(95)02722-X 1 SURFACE & COATINGS TECHNOLOGY, v.82, no.3, pp.270 - 276 SURFACE & COATINGS TECHNOLOGY 82 3 270 276 scie scopus A1996UY99200010 2-s2.0-0030214372 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article SURFACE MODIFICATION METALS CARBIDES WEAR ion implantation plasma plasma source ion implantation Ti-6Al-4V alloy surface modification