Kim, TG Park, JH Kim, Y Kim, SI Son, CS Kim, MS Kim, EK Min, SK 2024-01-21T19:31:29Z 2024-01-21T19:31:29Z 2021-09-05 1996-08 0268-1242 https://pubs.kist.re.kr/handle/201004/144373 Quantum wire (QWR) arrays grown on a GaAs substrate with V-grooved submicrometre gratings were investigated by high-resolution scanning electron microscopy (SEM) and temperature-dependent photoluminescence (PL) spectra. All samples were grown by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). Elliptical QWR arrays having a central thickness of 20 nm and an effective width of 40 nm were produced at the bottom of the V-grooved gratings. An intense and sharp PL peak with a full width at half maximum (FWHM) of 6 meV was observed from the QWR array at 21 K, which shows a sufficient mode coupling among the neighbouring QWRs and an effective carrier confinement at the quantum wire subbands. The distinct temperature dependence of the PL spectra also provides evidence o a well-fabricated QWR array, The small variation of the FWHM and peak energy from the temperature-dependent PL spectra implies that the carrier confinement at the QWR subbands is retained up to elevated temperatures. English IOP PUBLISHING LTD CHEMICAL-VAPOR-DEPOSITION GAAS GROWTH ALGAAS Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array Article 10.1088/0268-1242/11/8/017 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.11, no.8, pp.1214 - 1217 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11 8 1214 1217 scie scopus A1996VC53400016 2-s2.0-0030206014 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION GAAS GROWTH ALGAAS quantum wire array MOCVD GaAs