Bae, SY Wang, SX 2024-01-21T19:32:34Z 2024-01-21T19:32:34Z 2021-09-01 1996-07-01 0003-6951 https://pubs.kist.re.kr/handle/201004/144391 The successful sol-gel growth of colossal magnetoresistive La-Ca-Mn-O powder and epitaxial thin film is reported. Homogeneous powders were prepared at a temperature of 315 degrees C and epitaxial thin films were obtained on MgO(100) and LaAlO3(100) through heat treatment at 700-950 degrees C. A transition from semiconductor (negative d rho/dT) to metal (positive d rho/dT) was observed at 225 K, which was located in proximity to the magnetic transition temperature (T-c) of 228 K. A peak magnetoresistance ratio of similar to 900% occurred at 220 K. (C) 1996 American Institute of Physics. English AMER INST PHYSICS Sol-gel epitaxial growth of La1-xCaxMnO3 with colossal magnetoresistance effect Article 10.1063/1.118095 1 APPLIED PHYSICS LETTERS, v.69, no.1, pp.121 - 123 APPLIED PHYSICS LETTERS 69 1 121 123 scie scopus A1996UU59000041 Physics, Applied Physics Article sol-gel colossal magnetoresistance epitaxy