Park, KC Moon, JH Jang, J Oh, MH 2024-01-21T19:33:54Z 2024-01-21T19:33:54Z 2022-01-11 1996-06-17 0003-6951 https://pubs.kist.re.kr/handle/201004/144414 Hydrogen-free diamond-like carbon (DLC) films were deposited by the layer-by-layer technique using plasma enhanced chemical vapor deposition (PECVD), i.e., the alternative deposition of thin DLC layer and subsequent CF4 plasma exposure on its surface. The hydrogen-foe DLC could be grown on the Si wafer by repeated deposition of the 5 nm DLC layer and subsequent 200 s CF4 plasma exposure on its surface. On the other hand, the conventional DLC deposited by PECVD contains 25 at. % hydrogen inside. The CF4 plasma exposure on the thin DLC layer appears to etch weak C-C bonds and break hydrogen bonds, resulting in a widening optical band gap and increasing conductivity activation energy. (C) 1996 American Institute of Physics. English AMER INST PHYSICS AMORPHOUS-CARBON Deposition of hydrogen-free diamond-like carbon film by plasma enhanced chemical vapor deposition Article 10.1063/1.116648 1 APPLIED PHYSICS LETTERS, v.68, no.25, pp.3594 - 3595 APPLIED PHYSICS LETTERS 68 25 3594 3595 scie scopus A1996UR15300024 2-s2.0-0000512059 Physics, Applied Physics Article AMORPHOUS-CARBON