Lee, KH Jhon, YM Cha, HJ Jang, J 2024-01-21T19:34:57Z 2024-01-21T19:34:57Z 2022-01-10 1996-06 0741-3106 https://pubs.kist.re.kr/handle/201004/144432 The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiNx) ion-stopper and laser annealed poly-Si, The fabricated poly-Si TFT using SiNx as the ion-stopper as well as the gate insulator exhibited a held effect mobility of 110 cm(2)/Vs, threshold voltage of 3.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of similar to 10(6). Low off-state leakage current of 2.4 x 10(-12) A/mu m at the drain voltage of 5 V and gate voltage of -5 V was achieved. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Low temperature polycrystalline line silicon thin film transistor with silicon nitride ion stopper Article 1 IEEE ELECTRON DEVICE LETTERS, v.17, no.6, pp.258 - 260 IEEE ELECTRON DEVICE LETTERS 17 6 258 260 scie scopus A1996UN18300002 2-s2.0-0030166754 Engineering, Electrical & Electronic Engineering Article