Lee, JK Baik, YJ Eun, KY 2024-01-21T19:36:39Z 2024-01-21T19:36:39Z 2021-09-05 1996-05 0921-5093 https://pubs.kist.re.kr/handle/201004/144460 The effect of the addition of Ar and nitrogen gas on the deposition of diamond using a direct current (DC) plasma of CH4-H-2 gas mixture is investigated. The DC plasma is generated by applying a voltage between 820 and 900 V and the resulting current is between 5.5 and 6 A. The addition of Ar makes the plasma unstable and is limited to 5% owing to the plasma extinction at higher Ar concentrations. Growth rate and non-diamond carbon content in the diamond film increase with the Ar amount slightly irrespective of deposition temperature. An optical emission spectrum shows the increase of emission of C-2 and CH while showing a constant average electron energy of the plasma. On the contrary, by adding nitrogen, the morphology is changed to a ball-like diamond shape as well as growth rate of diamond film is decreased abruptly. The optical emission intensities of C-2 and hydrogen also show an abrupt drop with the nitrogen addition. The role of plasma species in the deposition behaviour of diamond is also discussed. English ELSEVIER SCIENCE SA METHANE PLASMA FILMS Effect of additional gas on diamond deposition by DC PACVD Article 10.1016/0921-5093(95)10143-8 1 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.209, no.1-2, pp.399 - 404 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 209 1-2 399 404 scie scopus A1996UT95200062 2-s2.0-0030143497 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article; Proceedings Paper METHANE PLASMA FILMS diamond deposition argon gas nitrogen gas