Son, CS Kim, SI Kim, TG Kim, Y Kim, MS Min, SK 2024-01-21T19:36:43Z 2024-01-21T19:36:43Z 2021-09-05 1996-05 0038-1098 https://pubs.kist.re.kr/handle/201004/144461 The effects of rapid thermal annealing (RTA) on the electrical properties of carbon-doped InGaAs epilayers have been analyzed by the Van der Pauw-Hall measurement. After RTA, the highest hole concentration of 3.3 x 10(20) cm(-3) at In0.09Ga(0.91)As epilayer was obtained. RTA processes cause the inactivated carbon atoms to be active by breaking C-H or C-H, bonds in the epilayers. This leads to the increase of the hole concentration. Below the InAs mole fraction of 0.35, we have obtained the maximum activation efficiency of the carbon atoms at the RTA temperature of 650 degrees C. The activation efficiency decreased with increasing InAs mole fraction. The type conversion from p-type to n-type took place after RTA at the InAs mole fraction of 0.44, while it occurred at that of 0.48 in the as-grown. The reason for the shift of the type conversion to the lower value after RTA would be due to the outdiffusion of In atoms in the InGaAs epilayer, and the activated carbon atoms would more effectively enter into In sites than As sites due to the outdiffusion of In atoms. English PERGAMON-ELSEVIER SCIENCE LTD CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY P+-ALGAAS GAAS PHOTOLUMINESCENCE TEMPERATURE RELAXATION Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs Article 10.1016/0038-1098(95)00791-1 1 SOLID STATE COMMUNICATIONS, v.98, no.5, pp.475 - 478 SOLID STATE COMMUNICATIONS 98 5 475 478 scie scopus A1996UG59800021 2-s2.0-0030151607 Physics, Condensed Matter Physics Article CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY P+-ALGAAS GAAS PHOTOLUMINESCENCE TEMPERATURE RELAXATION carbon doping