Lee, JK Jung, HJ Auciello, O Kingon, AI 2024-01-21T19:37:00Z 2024-01-21T19:37:00Z 2021-09-04 1996-05 0734-2101 https://pubs.kist.re.kr/handle/201004/144466 Pulsed laser ablation deposition was used to synthesize polycrystalline SrBi2Ta2O9 layered ferroelectric thin films on the platinized silicon substrate. The surface roughness of the deposited film was an average of 4 nm. The titanium element was diffused to the SrBi2Ta2O9 layer through the platinum layer. P-E hysteresis loop for the Pt/SrBi2Ta2O9/Pt/Ti capacitor was well saturated and symmetric (P-r = 3 mu C/cm(2), E(c) = 25 kV/cm). (C) 1996 American Vacuum Society. English A V S AMER INST PHYSICS Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique Article 10.1116/1.580411 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.14, no.3, pp.900 - 904 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 14 3 900 904 scie scopus A1996UR13400044 2-s2.0-0001024497 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article; Proceedings Paper SBTO PLD ferroelectric