Kim, SI Kim, MS Min, SK 2024-01-21T19:40:21Z 2024-01-21T19:40:21Z 2021-09-05 1996-03 0038-1098 https://pubs.kist.re.kr/handle/201004/144524 We have calculated the lattice constant, strain, and critical layer thickness of heavily carbon (C)-doped GaAs epilayers as a function of hole concentration. The lattice constant of C-doped GaAs epilayers decreased with increasing hole concentration due to strain by carbon incorporation where carbon has a smaller covalent radii than gallium and arsenic. We also have discussed the relationship between hole concentration and critical layer thickness (L(c)) by the excess stress and Matthews-Blakeslee model. We have calculated not only for the pure case but also 10% compensated case. In compensated epilayers the carbon a toms exist not only on the arsenic sites but also on the gallium sites. As we compared the experimental data of C-doped GaAs with the calculated results, the excess stress model is more agreeable than the Matthews-Blakeslee model. The excess stress, at which surface cross hatching could be seen from the surface, was sigma(exc)/mu = 0.0021 for pure case and 0.0024 for 10% compensated case. Thus we could identify these excess stresses as the critical excess stresses for C-doped GaAs epilayers. English PERGAMON-ELSEVIER SCIENCE LTD P-TYPE GAAS PHOTOLUMINESCENCE EPITAXY Strain and critical layer thickness analysis of carbon-doped GaAs Article 10.1016/0038-1098(95)00671-0 1 SOLID STATE COMMUNICATIONS, v.97, no.10, pp.875 - 878 SOLID STATE COMMUNICATIONS 97 10 875 878 scie scopus A1996TT72100011 2-s2.0-0030107286 Physics, Condensed Matter Physics Article P-TYPE GAAS PHOTOLUMINESCENCE EPITAXY MOCVD