Suh, SH Song, JH Moon, SW 2024-01-21T19:41:40Z 2024-01-21T19:41:40Z 2021-09-05 1996-02 0022-0248 https://pubs.kist.re.kr/handle/201004/144546 The hillock density on metalorganic vapor phase epitaxially grown (100) HgCdTe/GaAs could be reduced to less than 10 cm(-2) by rinsing the substrate with KOH in a water solution before growth. The HgCdTe layers which were annealed in Hg at 250 degrees C were n-type with carrier concentrations between mid-10(14) and mid-10(15) cm(-3). SIMS analysis also showed that the remaining potassium was not at a concentration high enough to influence the electrical properties of HgCdTe. This result shows that MOVPE process could be used to fabricate large area focal plane arrays which need hillock free surface morphology together with good electrical properties. English ELSEVIER SCIENCE BV CDXHG1-XTE MOVPE Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties Article 10.1016/0022-0248(95)00697-4 1 JOURNAL OF CRYSTAL GROWTH, v.159, no.1-4, pp.1132 - 1135 JOURNAL OF CRYSTAL GROWTH 159 1-4 1132 1135 scie scopus A1996UH32400240 2-s2.0-0030562517 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper CDXHG1-XTE MOVPE MOVPE