Kim, JS Kim, GH Suh, SH Chung, SJ 2024-01-21T19:41:50Z 2024-01-21T19:41:50Z 2021-09-05 1996-02 0022-0248 https://pubs.kist.re.kr/handle/201004/144549 In this study, various MBE growth techniques for Cl doping were tried to obtain n-type ZnSe/GaAs of high electrical and crystalline quality. Thr ZnSe layers with high Cl doping concentration which were grown by a conventional uniform doping method contained a high density of stacking faults and dislocations. The initial undoped ZnSe layer on the GaAs substrate played an important role in suppressing stacking faults in ZnSe;Cl layers. Electrochemical C-V and SIMS measurements showed that the electrical efficiency of incorporated Cl atoms in the ZnSe lattice was improved by the delta-doping method. The delta-doping technique was more efficient than the uniform and planar doping methods in improving the electrical and structural properties. English ELSEVIER SCIENCE BV EPITAXY LAYERS Electrical and structural properties of Cl-doped ZnSe MBE-grown with various doping techniques Article 10.1016/0022-0248(95)00577-3 1 JOURNAL OF CRYSTAL GROWTH, v.159, no.1-4, pp.354 - 358 JOURNAL OF CRYSTAL GROWTH 159 1-4 354 358 scie scopus A1996UH32400075 2-s2.0-0030562490 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper EPITAXY LAYERS Cl-doping