손창식 김성일 민병돈 김은규 민석기 최인훈 2024-01-21T20:09:24Z 2024-01-21T20:09:24Z 2022-01-10 1996-01 https://pubs.kist.re.kr/handle/201004/144786 Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide. Article 3 Japanese journal of applied physics, v.v. 35, no.no. 12B, pp.225 - 228 Japanese journal of applied physics v. 35 no. 12B 225 228 carbon