Kim, Y.T. Lee, C.W. 2024-01-21T20:11:51Z 2024-01-21T20:11:51Z 2022-01-10 1996-01 0947-8396 https://pubs.kist.re.kr/handle/201004/144828 The deconvolution process of X-ray photoemission spectra for O 1s and Ru 3d, X-ray diffraction and Rutherford backscattering spectrometry reveal that the RuOx films (x = 2.0-2.2) deposited at a O2 partial pressure less than 30% show (110)-oriented grains, whereas the RuOx films (x = 2.3-2.4) deposited at a 40-50% O2 partial pressure show amorphous and (101)-oriented grains due to the excess O interstitials and RuO3 or RuO4. These differences in the crystal phases of RuOx influence the crystal structure of BaTiO3 deposited on these RuOx bottom electrodes, resulting in a higher dielectric constant and a lower dissipation factor for tetragonal BaTiO3/RuOx (x = 2.1) than amorphous BaTiO3/RuOx (x = 2.4). English Springer-Verlag GmbH & Company KG, Berlin, Germany Amorphous films Barium titanate Composition effects Crystal structure Dielectric films Dielectric properties Ferroelectric materials Thin films Partial pressure Dielectric materials Effects of non-stoichiometric RuOx thin films on the dielectric properties of BaTiO3 thin films Article 10.1007/s003390050283 1 Applied Physics A: Materials Science and Processing, v.62, no.2, pp.187 - 189 Applied Physics A: Materials Science and Processing 62 2 187 189 scopus 2-s2.0-0030082011 Article Amorphous films Barium titanate Composition effects Crystal structure Dielectric films Dielectric properties Ferroelectric materials Thin films Partial pressure Dielectric materials