KIM, Y PARK, YK KIM, MS KANG, JM KIM, SI HWANG, SM MIN, SK 2024-01-21T20:35:01Z 2024-01-21T20:35:01Z 2022-01-10 1995-09-25 0003-6951 https://pubs.kist.re.kr/handle/201004/144987 We have observed the remarkable increase of GaAs lateral growth rate in the presence of CCl4 during metalorganic chemical vapor deposition (MOCVD) on patterned CaAs substrates. The lateral growth rate shows a linear dependence on CCl4 flow rate. On the other hand, the GaAs vertical growth rate is relatively insensitive to the CCl4 flow rate. The maximum ratio of lateral to vertical growth rate is about 14. Using these characteristics, we have fabricated CCl4-doped quantum wires (QWRs) on V-groove structures. The QWR structures show thickness enhancement factors, defined as the ratio of QWR thickness in the center region to the quantum well thickness in the nonpatterned region, as high as 5.6. (C) 1995 American Institute of Physics. English AMER INST PHYSICS VAPOR-PHASE EPITAXY LAYERS THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES Article 10.1063/1.114360 1 APPLIED PHYSICS LETTERS, v.67, no.13, pp.1871 - 1873 APPLIED PHYSICS LETTERS 67 13 1871 1873 scie scopus A1995RW22500026 2-s2.0-0343890646 Physics, Applied Physics Article VAPOR-PHASE EPITAXY LAYERS quantum wire