CHOI, WJ LEE, S ZHANG, JM KIM, Y KIM, SK LEE, JI KANG, KN CHO, K 2024-01-21T20:42:31Z 2024-01-21T20:42:31Z 2022-01-10 1995-04-01 0021-4922 https://pubs.kist.re.kr/handle/201004/145112 Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10)) English JAPAN SOC APPLIED PHYSICS OUT-DIFFUSION WAVE-GUIDE LASERS GAAS FILMS ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING Article 10.1143/JJAP.34.L418 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.34, no.4A, pp.L418 - L421 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 34 4A L418 L421 scie scopus A1995RD78400007 2-s2.0-33751126817 Physics, Applied Physics Article OUT-DIFFUSION WAVE-GUIDE LASERS GAAS FILMS DIELECTRIC CAP QUANTUM WELL DISORDERING GAAS/ALGAAS MULTIPLE QUANTUM WELL SILICON NITRIDE PECVD VACANCY DIFFUSION