YOO, KS CHO, NW SONG, HS JUNG, HJ 2024-01-21T20:42:45Z 2024-01-21T20:42:45Z 2022-01-11 1995-04 0925-4005 https://pubs.kist.re.kr/handle/201004/145116 SnO2-x gas sensors have been fabricated by thermal oxidation of Sn thin films. Sn thin films approximately 15000 Angstrom thick for commercial applications are deposited on a polished alumina substrate by using a high-vacuum resistance-heating evaporator. These films are oxidized at 500 degrees C in various oxygen partial pressures in order to control the x value in SnO2-x. The surface morphology and quantitative compositional analysis of SnO2-x thin films as functions of oxygen partial pressures are systematically investigated by SEM, RES and XPS. Gas sensitivities and response times of Pd-doped SnO2-x thin films to H-2, CO, C3H8 and i-C4H10 gases are measured at 300 degrees C. The relationship between gas sensitivities and the x value in SnO2-x thin films is discussed. English ELSEVIER SCIENCE SA LAUSANNE SURFACE-MORPHOLOGY AND GAS-SENSING CHARACTERISTICS OF SNO2-X THIN-FILMS OXIDIZED FROM SN FILMS Article 10.1016/0925-4005(95)85101-1 1 SENSORS AND ACTUATORS B-CHEMICAL, v.25, no.1-3, pp.474 - 477 SENSORS AND ACTUATORS B-CHEMICAL 25 1-3 474 477 scie scopus A1995RN87000032 2-s2.0-0029290678 Chemistry, Analytical Electrochemistry Instruments & Instrumentation Chemistry Electrochemistry Instruments & Instrumentation Article; Proceedings Paper GAS SENSORS TIN OXIDE