KIM, HJ KIM, JS KIM, Y KIM, MS MIN, SK 2024-01-21T20:46:25Z 2024-01-21T20:46:25Z 2022-01-10 1995-02-01 0022-2461 https://pubs.kist.re.kr/handle/201004/145177 The cross-section of multilayered Al0.5Ga0.5As/GaAs epitaxial structure was investigated by atomic force microscopy (AFM). For the first time, a 5% NaClO etchant was employed to discern each layer and a clear cross-sectional image of the multilayered epitaxial structure was obtained in less than 3 s etching time. The AFM image using 0.1 M HCl was poorer than that using 5% NaClO; this is attributed to the difference in etching selectivity between HCl and NaClO solution. English CHAPMAN HALL LTD MULTIQUANTUM WELL STRUCTURE CROSS-SECTIONAL OBSERVATION OF NACLO STAIN-ETCHED AL0.5GA0.5AS/GAAS MULTILAYER BY ATOMIC-FORCE MICROSCOPY Article 10.1007/BF00356327 1 JOURNAL OF MATERIALS SCIENCE, v.30, no.3, pp.678 - 682 JOURNAL OF MATERIALS SCIENCE 30 3 678 682 scie scopus A1995QG98800017 2-s2.0-0029249003 Materials Science, Multidisciplinary Materials Science Article MULTIQUANTUM WELL STRUCTURE AFM