PARK, YK MYLES, CW 2024-01-21T21:01:19Z 2024-01-21T21:01:19Z 2022-01-11 1995-01-15 0163-1829 https://pubs.kist.re.kr/handle/201004/145199 English AMERICAN PHYSICAL SOC HYDROGENATED AMORPHOUS-SILICON TIGHT-BINDING ELECTRONIC-STRUCTURE METASTABLE DEFECTS SIMULATIONS MODELS CONDUCTIVITY GENERATION STATES BONDS MOLECULAR-DYNAMICS STUDY OF DEFECT FORMATION IN A-SI-H Article 10.1103/PhysRevB.51.1671 1 PHYSICAL REVIEW B, v.51, no.3, pp.1671 - 1679 PHYSICAL REVIEW B 51 3 1671 1679 scie scopus A1995QH79000033 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article HYDROGENATED AMORPHOUS-SILICON TIGHT-BINDING ELECTRONIC-STRUCTURE METASTABLE DEFECTS SIMULATIONS MODELS CONDUCTIVITY GENERATION STATES BONDS