KIM, TS OH, MH KIM, CH 2024-01-21T21:01:33Z 2024-01-21T21:01:33Z 2022-01-11 1995-01-01 0040-6090 https://pubs.kist.re.kr/handle/201004/145203 (Ba0.5Sr0.5)TiO3 (Ba1-xSrxTiO3 with x = 0.5) thin films were deposited on indium tin oxide-coated glass substrate using r.f. magnetron sputtering as a function of film thickness (110-440 nm) at 550 degrees C in order to investigate the thickness dependence of structural and electrical properties. The films were studied by means of scanning electron microscopy and X-ray diffractometry. Dielectric constant epsilon', dissipation factor tan delta, current-voltage I-V characteristics and breakdown field were also studied. It was observed that the dense films were obtained regardless of him thickness and the thinner film showed the rougher surface. As the thickness of the film increased, the dielectric constant increased and the dissipation factor decreased, becoming finally saturated in dielectric constant and dissipation factor with the increase of film thickness. As the film thickness increased, the leakage current decreased and the breakdown field gradually increased from 1.18 MV cm(-1) at 110 nm to 2.2 MV cm(-1) at 330 nm, and then decreases up to 1.97 MV cm(-1) at 440 nm. English ELSEVIER SCIENCE SA LAUSANNE EPITAXIAL-GROWTH FABRICATION THE THICKNESS DEPENDENCE OF (BA0.5SR0.5)TIO3 THIN-FILMS DEPOSITED ON INDIUM TIN OXIDE-COATED GLASS SUBSTRATE USING RF MAGNETRON SPUTTERING Article 10.1016/0040-6090(94)06252-G 1 THIN SOLID FILMS, v.254, no.1-2, pp.273 - 277 THIN SOLID FILMS 254 1-2 273 277 scie scopus A1995QB76100044 2-s2.0-0029218925 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article EPITAXIAL-GROWTH FABRICATION DEPOSITION PROCESS DIELECTRIC PROPERTIES PHYSICAL VAPOR DEPOSITION SPUTTERING