KIM, MS KIM, Y LEE, MS PARK, YJ KIM, SI MIN, SK 2024-01-21T21:01:40Z 2024-01-21T21:01:40Z 2022-01-11 1995-01 0022-0248 https://pubs.kist.re.kr/handle/201004/145205 The growth behavior of GaAs/AlGaAs during metalorganic chemical vapor deposition (MOCVD) on V-grooved GaAs(311)A substrates, specifically its dependence on growth temperature and V/III ratio, has been investigated. A new (100) facet has evolved at the outer edge of the short side wall of the groove. The length of this facet decreases with increasing the growth temperature and reducing the V/III ratio. The phenomena can be explained by the surface mobility or incorporation rate dependence of group III species on each facet as it appeared in this study. The best surface morphology has been obtained at 750 degrees C. The newly evolved (100) facet has a defect free surface. Photoluminescence (PL) measurements have been carried out after growing 2 kinds of GaAs quantum wells (QWLs) on the patterned (311)A substrates. In the case of QWLs with a thick AlGaAs buffer layer, 3 peaks from the (100), (433)A and (311)A planes have been identified, while the (100) peak was not detected in the case of a thin buffer layer. English ELSEVIER SCIENCE BV PHASE EPITAXY LASERS ALGAAS MOVPE GROWTH-BEHAVIOR ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION Article 10.1016/0022-0248(94)00527-3 1 JOURNAL OF CRYSTAL GROWTH, v.146, no.1-4, pp.482 - 488 JOURNAL OF CRYSTAL GROWTH 146 1-4 482 488 scie scopus A1995QD18700087 2-s2.0-0029218919 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper PHASE EPITAXY LASERS ALGAAS MOVPE