김용태 민석기 C. S. Kwon I. H. Choi 2024-01-21T21:07:12Z 2024-01-21T21:07:12Z 2022-01-10 1995-01 https://pubs.kist.re.kr/handle/201004/145299 The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization. Article 3 Japanese journal of applied physics, v.v. 34, pp.78 - 81 Japanese journal of applied physics v. 34 78 81 nitrogen implantation