김용태 C. S. Kwon D. J. Kim J. Y. Lee I. H. Choi 2024-01-21T21:09:30Z 2024-01-21T21:09:30Z 2022-01-10 1995-01 https://pubs.kist.re.kr/handle/201004/145338 The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization. Article 3 J. of the Korean vacuum soc., v.v. 4, pp.79 - 83 J. of the Korean vacuum soc. v. 4 79 83