Lee, C.W. Kim, Y.T. 2024-01-21T21:12:37Z 2024-01-21T21:12:37Z 2022-01-10 1995-01 0038-1101 https://pubs.kist.re.kr/handle/201004/145391 Electrical and physical properties of plasma enhanced chemical vapor deposited tungsten nitride (W67N33) Schottky contacts to GaAs are investigated at the rapid thermal annealing (RTA) temperature of 500-1000°C for 30 s. The cross-sectional transmission electron microscopy and second ion mass spectroscopy reveal that the W67N33 Schottky contacts to GaAs maintains the integrity of interface during RTA at 1000°C for 30 s without any reaction of WAs or interdiffusion phenomena. Barrier heights and ideality factors for as-deposited W67N33 contacts to GaAs are 0.86 eV and 1.04, which are changed to 0.72 eV and 1.128 after RTA at 1000°C for 30 s. ？ 1995. English Annealing Chemical vapor deposition Current voltage characteristics Diffusion High temperature properties Interfaces (materials) Nitrides Secondary ion mass spectrometry Semiconducting gallium arsenide Thermodynamic stability Transmission electron microscopy X ray diffraction Barrier height Ideality factor Interdiffusion Tungsten nitride Electric contacts High temperature thermal stability of plasma-deposited tungsten nitride Schottky contacts to GaAs Article 10.1016/0038-1101(94)00148-9 1 Solid State Electronics, v.38, no.3, pp.679 - 682 Solid State Electronics 38 3 679 682 scopus 2-s2.0-0029273735 Article Annealing Chemical vapor deposition Current voltage characteristics Diffusion High temperature properties Interfaces (materials) Nitrides Secondary ion mass spectrometry Semiconducting gallium arsenide Thermodynamic stability Transmission electron microscopy X ray diffraction Barrier height Ideality factor Interdiffusion Tungsten nitride Electric contacts