Kim, Yong Tae Lee, Chang Woo 2024-01-21T21:12:47Z 2024-01-21T21:12:47Z 2022-01-10 1995-01 1023-4462 https://pubs.kist.re.kr/handle/201004/145394 Copper thin films are deposited on amorphous tungsten nitride diffusion barriers by a metal-organic chemical vapor deposition method. The deposition rate and preferential orientation of (111) vs. (200) ratio of Cu film are considerably lower than those of Cu films deposited on SiO2, boro-phospho-silica glass, and Si due to substrate-driven reaction. RBS and XRD measurements clearly show that 100-800 angstrom amorphous W67N33 layer successfully executes the role of diffusion barrier for Cu during the annealing process at 800°C for 30 min. English Chinese Institute of Electrical Engineering, Taipei, Taiwan Amorphous materials Annealing Copper Glass Metallic films Metallizing Metallorganic chemical vapor deposition Plasma applications Rutherford backscattering spectroscopy Silica Thin films X ray diffraction Borophosphosilica glass Diffusion barrier Tungsten nitride Tungsten compounds Plasma deposited amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization Article 1 Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an, v.2, no.1, pp.7 - 11 Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an 2 1 7 11 scopus 2-s2.0-0029241968 Article Amorphous materials Annealing Copper Glass Metallic films Metallizing Metallorganic chemical vapor deposition Plasma applications Rutherford backscattering spectroscopy Silica Thin films X ray diffraction Borophosphosilica glass Diffusion barrier Tungsten nitride Tungsten compounds amorphous PECVD-W//6//7N//3//3 layer