Tae, Kim Y. Woo, Lee C. 2024-01-21T21:13:05Z 2024-01-21T21:13:05Z 2022-01-10 1995-01 0015-0193 https://pubs.kist.re.kr/handle/201004/145399 Effects of bottom electrodes on dielectric properties of 1000 A thick PbTiO, thin film capacitors are studied employing Pt and plasma deposited W,N/W bottom electrodes. The tetragonality of sputtered PbTiO, thin film on W,N/W bilayer is better than that of PbTiO, thin film on Pt and the leakage current of the W2N/W/PbTiO,/Au capacitor is at least two orders of magnitude less than that of the Pt/PbTiO,/Au capacitor. The formation of WO, and diffusion barrier properties of W2N preventing the interfacial reaction among bottom electrodes, PbTiO, and Si are discussed for the explanation of high dielectric properties of W,N/W/PbTiO,/Au capacitor. ？ 1995, Taylor & Francis Group, LLC. All rights reserved. English Dielectric properties of pbti03 thin film capacitors deposited on tungsten nitride/tungsten bilayers Article 10.1080/00150199508223584 1 Ferroelectrics, v.166, no.1, pp.159 - 163 Ferroelectrics 166 1 159 163 scopus 2-s2.0-84972939427 Article dielectric properties PbTiO W2N/W bilayer WOy