Kim, HJ Kim, SJ Kim, DM Chung, H Woo, DH Kim, SI Choi, WJ Han, IK Kim, SH Lee, JL Kang, KN Cho, K 2024-01-21T21:13:37Z 2024-01-21T21:13:37Z 2021-09-04 1995-01 0951-3248 https://pubs.kist.re.kr/handle/201004/145408 We fabricated 1x240 mu m(2) GaAs MESFET's and investigated their microwave characteristics under optical illumination with varying optical power density from 1.6mW/cm(2) to 472mW/cm(2). Typical current gain cut-off frequency(fT) and maximum frequency of oscillation(f(max)) of fabricated devices were 6.6GHz and 13.6GHz, respectively, at V-ds=3.0V and V-gs=-0.25V without optical illumination. Under 157mW/cm(2) of optical illumination at the same bias, however, fT and f(max) were increased to 9.5GHz and 15.3GHz, respectively. Extracted device parasitics with optical illumination are also reported. English IOP PUBLISHING LTD Microwave characteristics of GaAs MESFET with optical illumination Article 1 COMPOUND SEMICONDUCTORS 1995, v.145, pp.763 - 768 COMPOUND SEMICONDUCTORS 1995 145 763 768 scie A1996BF51P00138 Physics, Multidisciplinary Physics, Condensed Matter Physics Article; Proceedings Paper GaAs MESFET