Boo, J.-H. Yu, K.-S. Kim, Y. Yeon, S.H. Jung, I.N. 2024-01-21T21:14:12Z 2024-01-21T21:14:12Z 2021-09-02 1995-01 0897-4756 https://pubs.kist.re.kr/handle/201004/145418 Cubic SiC films have been grown on the Si(100) and Si(111) substrates in the temperature range 650-900 °C by low-pressure organometallic chemical vapor deposition (LP-OMCVD) using 1,3-disilabutane, H3SiCH2SiH2CH3, as a single molecular precursor. Polycrystalline cubic SiC films were formed on Si(100) substrates at such a low temperature as 650 °C. The films obtained on carbonized Si(100) substrates at temperatures higher than 850 °C show improved crystallinity in their X-ray diffraction patterns. On the other hand, highly oriented SiC films in the [111] direction were formed on carbonized Si(111) substrates at 900 °C. The growth temperatures in this study are much lower than those previously reported, and this is the first report of cubic SiC films grown using 1,3-disilabutane. ？ 1995, American Chemical Society. All rights reserved. English Growth of Cubic SiC Films Using 1,3-Disilabutane Article 10.1021/cm00052a014 1 Chemistry of Materials, v.7, no.4, pp.694 - 698 Chemistry of Materials 7 4 694 698 scopus 2-s2.0-33751156978 Article cubic SiC films