SHIN, KH GRAHAM, CD ZHOU, PY 2024-01-21T21:31:20Z 2024-01-21T21:31:20Z 2021-09-02 1994-11 0018-9464 https://pubs.kist.re.kr/handle/201004/145478 Intensive etching experiments have been performed in order to investigate the origin of asymmetric magnetization reversal (AMR), which can be developed in amorphous ferromagnetic ribbons annealed in a controlled magnetic field. The variation of the characteristics of AMR with etching time was analyzed from dc magnetic hysteresis loops measured in situ during etching. The AMR characteristics were altered very rapidly and severely just after most of the outer oxide layer was removed, but did not disappear until 30% of the volume of the as-annealed sample had been etched away. From Auger depth profile analysis and domain observations, we conclude that the major origin of AMR resides in a high coercive layer between the oxide layer and the bulk material. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC EFFECTS OF CHEMICAL ETCHING ON THE ASYMMETRIC MAGNETIZATION REVERSAL IN AMORPHOUS MAGNETIC ALLOY Article 10.1109/20.334223 1 IEEE TRANSACTIONS ON MAGNETICS, v.30, no.6, pp.4791 - 4793 IEEE TRANSACTIONS ON MAGNETICS 30 6 4791 4793 scie scopus A1994PU42900322 2-s2.0-0028550429 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper sensor