JHON, YH KIM, DH CHU, H CHOI, SS 2024-01-21T21:31:34Z 2024-01-21T21:31:34Z 2022-01-10 1994-10-15 0021-4922 https://pubs.kist.re.kr/handle/201004/145482 Amorphous silicon films of 50 mm x 50 mm have been crystallized by 1-dimensionally scanning a line shape excimer laser beam with a Gaussian profile in the scanning direction, which basically reduces the nonuniformity of the 2-dimensional scanning method. The laser energy density and substrate temperature were varied. Grains as large as 100 nm with smooth surfaces were obtained with a laser energy density of 300 mJ/cm(2) with substrate heating of 400 degrees C, where the conductivity was measured to be 9.6 x 10(-6) S/cm. Higher energy density increased the grain size and crystallinity but the conductivity decreased due to the separation of grain clusters. Substrate heating mas found to considerably increase the grain size and crystallinity. English JAPAN SOC APPLIED PHYSICS THIN-FILM TRANSISTORS INDUCED AMORPHIZATION POLYSILICON TFTS CRYSTALLIZATION OF AMORPHOUS-SILICON BY EXCIMER-LASER ANNEALING WITH A LINE-SHAPE BEAM HAVING A GAUSSIAN PROFILE Article 10.1143/JJAP.33.L1438 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.33, no.10B, pp.L1438 - L1441 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 33 10B L1438 L1441 scie scopus A1994PN81900002 2-s2.0-0028532244 Physics, Applied Physics Article THIN-FILM TRANSISTORS INDUCED AMORPHIZATION POLYSILICON TFTS LASER-INDUCED CRYSTALLIZATION EXCIMER LASER ANNEALING POLY-SI RAMAN SPECTRUM ELECTRICAL CONDUCTIVITY UV REFLECTANCE TEM AFM XRD GRAIN