KIM, TW KIM, Y Min, Suk Ki LEE, JY LEE, SJ 2024-01-21T21:32:33Z 2024-01-21T21:32:33Z 2022-01-10 1994-10 0268-1242 https://pubs.kist.re.kr/handle/201004/145498 Transmission electron microscopy (TEM), capacitance-voltage (C-V), and photoluminescence (PL) measurements have been performed to characterize the properties of edge delta-doped and centre delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapor deposition. Direct observation of the Si delta-doped layer in GaAs quantum wells has been achieved by TEM, and the results of the C-V profiles indicate that the full width half-maximum value of centre delta-doped quantum wells is much narrow than that of edge delta-doped quantum wells. Temperature-dependent PL spectra of centre delta-doped quantum wells show the strong luminescence attributed to the Fermi edge singularity caused by enhanced confinement of carriers by the quantum well. English IOP PUBLISHING LTD STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION Article 10.1088/0268-1242/9/10/012 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.9, no.10, pp.1823 - 1826 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 9 10 1823 1826 N scie scopus A1994PL90300012 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article FERMI-EDGE SINGULARITY GAAS MODULATION SUBBANDS SPECTRA ALGAAS delta-doping