KIM, TW YOO, KH LEE, KS KIM, Y MIN, SK YOM, SS LEE, SJ 2024-01-21T21:33:07Z 2024-01-21T21:33:07Z 2021-09-02 1994-09-01 0021-8979 https://pubs.kist.re.kr/handle/201004/145507 Shubnikov-de Haas and Van der Pauw Hall effect measurements at 1.5 K have been carried out to investigate the existence of a two-dimensional electron gas and to determine subband energies in a Si-delta-doped Al0.27Ga0.73As/GaAs single quantum well. The fast Fourier transformation results for the S-dH data indicate clearly the occupation of two subbands in edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Capacitance-voltage profiling and temperature-dependent photoluminescence measurements have been performed to characterize the properties of edge delta-doped Al0.27Ga0.73As/GaAs quantum wells. Using these experimental results and a self-consistent numerical method which took into account the exchange-correlation effects, the electron subband energies were determined. These results indicate that edge delta-doped Al0.27Ga0.73As/GaAs single quantum wells are similar to the asymmetrical potential wells occupied by relatively high electron carrier densities. English AMER INST PHYSICS CHEMICAL VAPOR-DEPOSITION LUMINESCENCE SPECTRUM GAAS SINGULARITY SI MODULATION ALGAAS LAYER FIELD GAS MAGNETOTRANSPORT AND ELECTRON SUBBAND STUDIES OF EDGE DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS Article 10.1063/1.357523 1 JOURNAL OF APPLIED PHYSICS, v.76, no.5, pp.2863 - 2867 JOURNAL OF APPLIED PHYSICS 76 5 2863 2867 scie scopus A1994PD44000042 2-s2.0-0343627275 Physics, Applied Physics Article CHEMICAL VAPOR-DEPOSITION LUMINESCENCE SPECTRUM GAAS SINGULARITY SI MODULATION ALGAAS LAYER FIELD GAS delta-doping Magnetotransport thin films Al0.27Ga0.73As/GaAs