YOON, YS YOON, YK KANG, WN YOM, SS 2024-01-21T21:35:14Z 2024-01-21T21:35:14Z 2022-01-11 1994-07 0022-0248 https://pubs.kist.re.kr/handle/201004/145543 Islands of BaTiO3 in a thin film deposited on a (111) InSb substrate by metalorganic chemical vapor deposition at a temperature of 300-degrees-C were investigated. Refractive index measured by ellipsometer using a He-Ne laser was 1.95, which is nearly the same value as that of amorphous BaTiO3 with microcrystals. X-ray diffraction peaks showed the deposit to be mostly amorphous and partly crystalline having the [110]BaTiO3 direction normal to the (111) InSb. Transmission electron microscopy results showed that partially epitaxial BaTiO3 islands with periodic misfit dislocations had been formed at the interface between amorphous BaTiO3 thin layer and the (111) InSb substrate. These BaTiO3 islands on the (111) InSb substrate formed at a low growth temperature were three-dimensional nuclei which were closely associated with surface irregularities of the (111) InSb substrate. English ELSEVIER SCIENCE BV PULSED LASER DEPOSITION THIN-FILMS BARIUM-TITANATE ELECTRICAL-PROPERTIES EPITAXIAL-GROWTH SILICON ANALYSIS OF THE FORMATION OF BATIO3 ISLAND DEPOSITED ON (111) INSB BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE Article 10.1016/0022-0248(94)90310-7 1 JOURNAL OF CRYSTAL GROWTH, v.140, no.3-4, pp.355 - 360 JOURNAL OF CRYSTAL GROWTH 140 3-4 355 360 scie scopus A1994NW31400014 2-s2.0-0028464594 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article PULSED LASER DEPOSITION THIN-FILMS BARIUM-TITANATE ELECTRICAL-PROPERTIES EPITAXIAL-GROWTH SILICON