HER, J LIM, H KIM, CH HAN, IK LEE, JI KANG, KN KIM, JE PARK, HY 2024-01-21T21:35:53Z 2024-01-21T21:35:53Z 2022-01-10 1994-06-15 0261-8028 https://pubs.kist.re.kr/handle/201004/145554 English CHAPMAN HALL LTD 2-TEMPERATURE TECHNIQUE FOR PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION GROWTH OF SILICON-NITRIDE ON INP Article 10.1007/BF00273243 1 JOURNAL OF MATERIALS SCIENCE LETTERS, v.13, no.12, pp.898 - 900 JOURNAL OF MATERIALS SCIENCE LETTERS 13 12 898 900 scie scopus A1994NU61500017 2-s2.0-0028442550 Materials Science, Multidisciplinary Materials Science Article silicon-nitride on InP