MOON, SW SUH, SH CHOI, CS 2024-01-21T21:38:59Z 2024-01-21T21:38:59Z 2022-01-11 1994-04 0022-0248 https://pubs.kist.re.kr/handle/201004/145605 Firstly, we have studied the indium doping concentration dependence of the electrical properties of Hg0.7Cd0.3Te monolayers grown by liquid phase epitaxy (LPE). Below the indium concentration of 1 X 10(18) cm-3, nearly 100% of indium was electrically active. Indium-doped Hg0.7Cd0.3Te /undoped Hg0.8Cd0.2Te/CdTe heterojunction was grown in a double bin graphite boat, using a slider LPE technique. After the growth, Hg-annealing was performed. An n-type Hg0.8Cd0.2Te layer was formed just beneath the 1190.7Cd0.3Te cap layer by Hg-diffusion. The Hg0.8Cd0.2Te p-n homojunction formed thereby would have no misfit defects. English ELSEVIER SCIENCE BV SEMICONDUCTING HG1-XCDXTE ALLOYS DEFECT STRUCTURE LATTICE-DEFECTS HETEROSTRUCTURES CDXHG1-XTE INDIUM-DOPED HG0.7CD0.3TE/UNDOPED HG0.8CD0.2TE/CDTE HETEROJUNCTION GROWN BY TE-RICH LIQUID-PHASE EPITAXY Article 10.1016/0022-0248(94)90936-9 1 JOURNAL OF CRYSTAL GROWTH, v.138, no.1-4, pp.944 - 949 JOURNAL OF CRYSTAL GROWTH 138 1-4 944 949 scie scopus A1994NN99700168 2-s2.0-0028760621 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article; Proceedings Paper SEMICONDUCTING HG1-XCDXTE ALLOYS DEFECT STRUCTURE LATTICE-DEFECTS HETEROSTRUCTURES CDXHG1-XTE