KIM, TW JUNG, M KIM, HJ PARK, TH YOON, YS KANG, WN YOM, SS NA, HK 2024-01-21T21:39:40Z 2024-01-21T21:39:40Z 2021-09-02 1994-03-14 0003-6951 https://pubs.kist.re.kr/handle/201004/145616 Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p-Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (approximately 500-degrees-C) temperature was performed to produce high quality TiO2/p-Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x-ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples of the Ag/TiO2/p-Si. The interface state density at the TiO2/p-Si interface was approximately high 10(11) eV-1 cm-2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance-voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory. English AMER INST PHYSICS TA2O5 FILMS THIN-FILMS SILICON INP OPTICAL AND ELECTRICAL-PROPERTIES OF TITANIUM-DIOXIDE FILMS WITH A HIGH MAGNITUDE DIELECTRIC-CONSTANT GROWN ON P-SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE Article 10.1063/1.111898 1 APPLIED PHYSICS LETTERS, v.64, no.11, pp.1407 - 1409 APPLIED PHYSICS LETTERS 64 11 1407 1409 scie scopus A1994NA49600032 2-s2.0-0028387893 Physics, Applied Physics Article TA2O5 FILMS THIN-FILMS SILICON INP thin films