Jo, W. Cho, H.-J. Noh, T.W. Cho, Y.S. Kwun, S.-I. Byun, Y.T. Kim, S.H. 2024-01-21T22:09:45Z 2024-01-21T22:09:45Z 2022-01-10 1994-01 0015-0193 https://pubs.kist.re.kr/handle/201004/145891 Ferroelectric bismuth titanate thin films have been deposited on LaA103, SrTi03, MgO, Al2O3, and ZrO2/SiO2/Si substrates using a Q-switched Nd:YAG laser. X-ray diffraction studies show that most films on single crystal substrates have preferential crystallographic orientation. The film on MgO(11O) shows large electrooptic characteristics with an effective electrooptic coefficient of about 3.8xl0-15 m2/V2. Using a lens coupling method, it is demonstrated that light can propagate along the Bi4Ti3O12 layer in a Bi4Ti3O12/ZrO2/SiO2/Si(100) heterostructure. ？ 1994, Taylor & Francis Group, LLC. All rights reserved. English Bismuth compounds Crystal orientation Deposition Electric properties Electrooptical effects Light propagation Optical properties Q switched lasers Refractive index Substrates Thin films X ray analysis Crystallographic orientation Electro optic properties Ferroelectric thin films Heterostructure Lens coupling method X ray diffraction Dielectric films Studies on structural and electrooptic properties of ferroelectric bismuth titanate thin films Article 10.1080/00150199408017610 1 Ferroelectrics, v.152, no.1, pp.139 - 144 Ferroelectrics 152 1 139 144 scopus 2-s2.0-0027927691 Article Bismuth compounds Crystal orientation Deposition Electric properties Electrooptical effects Light propagation Optical properties Q switched lasers Refractive index Substrates Thin films X ray analysis Crystallographic orientation Electro optic properties Ferroelectric thin films Heterostructure Lens coupling method X ray diffraction Dielectric films