LEE, CW KIM, YT LEE, JY 2024-01-21T22:10:10Z 2024-01-21T22:10:10Z 2022-01-10 1994-01 0003-6951 https://pubs.kist.re.kr/handle/201004/145898 Thermally stable tungsten nitride/tungsten bilayer has been proposed for the application of metallization. This bilayer is sequentially formed by plasma enhanced chemical vapor deposition without breaking vacuum. The Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy reveal that the interaction between the W and Si substrate can be prevented by interposing a 800-Angstrom-thick W67N33 layer. The W67N33/W bilayer maintains the integrity of the interface during annealing at 850 degrees C for 30 min without the formation of Si2W and interdiffusion phenomena. Sheet resistivity of the W67N33/W bilayer is gradually decreased from 17 to 12 mu Omega cm at annealing temperatures up to 850 degrees C. English AMER INST PHYSICS NEW METHOD TO IMPROVE THERMAL-STABILITY IN THE INTERFACE OF SILICON AND TUNGSTEN BY THE INTERPOSITION OF PLASMA-DEPOSITED TUNGSTEN NITRIDE THIN-FILM Article 10.1063/1.111068 1 APPLIED PHYSICS LETTERS, v.64, no.5, pp.619 - 621 APPLIED PHYSICS LETTERS 64 5 619 621 N scie scopus A1994MU63300030 2-s2.0-0001477024 Physics, Applied Physics Article CHEMICAL VAPOR-DEPOSITION LOW-PRESSURE ENCROACHMENT PHASE