Park, S.-Y. Cho, B.-W. Yun, K.-S. Lee, E.-C. 2024-01-21T22:11:11Z 2024-01-21T22:11:11Z 2021-09-02 1994-01 0021-891X https://pubs.kist.re.kr/handle/201004/145915 With the aim of obtaining TiO2 films with increased photoresponse titanium metal was alloyed with bismuth and then directly oxidized. The free energy efficiencies of the Ti-Bi oxide increased four times by increasing the bismuth content up to 10 wt %. The spectral response of the Ti -Bi oxides was slightly shifted toward the visible region with respect to the response of TiO2, and their Eg were observed to be in the range 2.87-3.0 eV. ？ 1994 Chapman & Hall. English Kluwer Academic Publishers Photoelectrochemical properties of bismuth-doped titanium oxide electrodes Article 10.1007/BF00241311 1 Journal of Applied Electrochemistry, v.24, no.11, pp.1133 - 1138 Journal of Applied Electrochemistry 24 11 1133 1138 N scopus 2-s2.0-0028545022 Article Alloying Bismuth Characterization Composition effects Doping (additives) Electrochemistry Films Oxidation Synthesis (chemical) Titanium dioxide Bismuth doped titanium oxide electrodes Photoelectrochemical properties Electrochemical electrodes photoelectrolysis bismuth-doped titanium oxide electrode photoelectrochemical conversion efficiency energy band gap light intensity