KIM, SI KIM, Y LEE, MS KIM, MS MIN, SK LEE, CC 2024-01-21T22:12:46Z 2024-01-21T22:12:46Z 2022-01-10 1993-12 0038-1098 https://pubs.kist.re.kr/handle/201004/145942 We have analyzed Hall mobilities and photoluminescence (PL) spectra of carbon(C)-doped GaAs epilayers as a function of hole concentration and temperature. We have obtained an empirical relation of hole concentration dependent Hall mobility appropriate for C-doped GaAs which have higher Hall mobilities than Zn-doped GaAs. By PL measurement, temperature dependence of band gap energy E(g) and PL peak energy E(M) shift of C-doped GaAs with a hole concentration of 9.2 x 10(19) cm(-3) have been measured. The resulting E(g) and E(M) at 0 K are (1.420 +/- 0.003) eV and (1.458 +/- 0.003) eV, respectively. The PL peak energy of C-doped GaAs with hole concentrations varying from 1 x 10(17) to 9.2 x 10(19) cm(-3) have been measured and compared with previously reported data. English PERGAMON-ELSEVIER SCIENCE LTD HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS Article 10.1016/0038-1098(93)90637-3 1 SOLID STATE COMMUNICATIONS, v.88, no.9, pp.743 - 746 SOLID STATE COMMUNICATIONS 88 9 743 746 N scie scopus A1993ML70800016 2-s2.0-0027870598 Physics, Condensed Matter Physics Article P-TYPE GAAS MOLECULAR-BEAM EPITAXY N-TYPE ABSORPTION hall mobility photoluminescence carbon-doped GaAs