YOON, YS KANG, WN YOM, SS KIM, TW JUNG, M KIM, HJ PARK, TH NA, HK 2024-01-21T22:16:26Z 2024-01-21T22:16:26Z 2021-09-02 1993-08-23 0003-6951 https://pubs.kist.re.kr/handle/201004/145999 Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (approximately 500-degrees-C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/P-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 filmS Was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 10(11) eV-1 cm-2 at the middle of the Si energy gap. English AMER INST PHYSICS INP ELECTRICAL AND OPTICAL-PROPERTIES OF PBTIO3 THIN-FILMS ON P-SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE Article 10.1063/1.109794 1 APPLIED PHYSICS LETTERS, v.63, no.8, pp.1104 - 1106 APPLIED PHYSICS LETTERS 63 8 1104 1106 scie scopus A1993LU09500030 2-s2.0-0344144740 Physics, Applied Physics Article INP thin films PbTiO3 MOCVD