LEE, CW KIM, YT MIN, SK 2024-01-21T22:31:27Z 2024-01-21T22:31:27Z 2022-01-10 1993-06-21 0003-6951 https://pubs.kist.re.kr/handle/201004/146026 Low resistive tungsten nitride (W100-xNx) thin films have been deposited at 350-400-degrees-C by plasma enhanced chemical vapor deposition. X-ray photoemission spectroscopy, Rutherford backscattering spectrometry, and x-ray diffraction show that the nitrogen composition in W100-xNx films can be easily controlled between 15 and 72 at. % corresponding to an increase of the NH3/WF6 partial pressure ratio and fcc structure W2N can be obtained. The resistivities of W100-xNx films are varied from 70 to 440 muOMEGA cm according to nitrogen composition. English AMER INST PHYSICS DIFFUSION BARRIER CHARACTERISTICS OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TUNGSTEN NITRIDE THIN-FILMS Article 10.1063/1.109622 1 APPLIED PHYSICS LETTERS, v.62, no.25, pp.3312 - 3314 APPLIED PHYSICS LETTERS 62 25 3312 3314 scie scopus A1993LH60700031 2-s2.0-36448998924 Physics, Applied Physics Article DIFFUSION BARRIER