CHOI, SK YI, CW CHO, WI CHO, BW JU, JB YUN, KS YAMAZOE, N 2024-01-21T22:33:03Z 2024-01-21T22:33:03Z 2022-01-10 1993-05 0925-4005 https://pubs.kist.re.kr/handle/201004/146053 A MOSFET type sensor for O2 gas detection with a gate material of LaF3 film deposited on an ordinary n-channel MOSFET was fabricated. The LaF3 film of 800 angstrom thickness and the Pt film of 500 angstrom thickness were deposited, sequentially, by the e-beam evaporation method. The amount of drain current was decreased by about 130 muA with O2 gas and the response and regeneration times of this sensor were 1 and 17 min at 80-degrees-C, respectively, when measured by the constant voltage method (V(D) = 3 V, V(G) = 0 V). In the constant voltage method, the higher the operating temperature, the shorter the response time. As oxygen gas was injected, the gate voltage of this sensor was shifted to 30 mV and its response time was 3.5 min with the constant current method (I(D) = 500 nA). When the oxygen concentration was 0.05% in nitrogen, the gate voltage ratio of the oxygen gas sensor approached 0.5. English Elsevier BV A MOSFET type sensor for oxygen sensing using LaF3 as a gate material Article 10.1016/0925-4005(93)85319-6 1 Sensors and Actuators B: Chemical, v.13, no.1-3, pp.45 - 48 Sensors and Actuators B: Chemical 13 1-3 45 48 N scie scopus A1993LM16400011 2-s2.0-0027593815 Chemistry, Analytical Electrochemistry Instruments & Instrumentation Chemistry Electrochemistry Instruments & Instrumentation Article; Proceedings Paper ROOM-TEMPERATURE platinum thin film dissolved oxygen gate voltage drain curretn Nernst slope LaF//3 gate material MOSFET sputtering