JU, BK OH, MH TCHAH, KH 2024-01-21T22:34:38Z 2024-01-21T22:34:38Z 2021-09-02 1993-03-01 0022-2461 https://pubs.kist.re.kr/handle/201004/146078 In the silicon fusion bonding (SFB) process, the influence of post-annealing atmospheres on the micro-gap existing at the Si-Si bonding interface was investigated with the observation of ultrasonic images, angle lap-stained junctions and cross-section SEM morphologies. Additionally, the bonding strength and the electrical properties of diodes were compared after annealing processes at 1100-degrees-C for 10 s to 10 h in wet O2, dry O2 and N2 atmospheres. Our results show that a significant saving of annealing time necessary to eliminate the noncontact micro-gap region having a width of less-than-or-equal-to 0.1 mum can be obtained if the hydrogen-bonded wafer pair is pre-stabilized and post-annealed in wet O2 (95-degrees-C water bubbling) rather than in a dry O2 or N2 atmosphere. Based on the above results, we propose that the stabilizing and annealing step in highly oxidizing atmosphere has an important role in the oxide filling-up phenomenon between wafer and wafer gap, in addition to the well-known mechanism of wafer plastic deformation at high temperature followed by solid-state diffusion of Si and O atoms. English CHAPMAN HALL LTD PRESSURE SENSORS ON-INSULATOR SINGLE-CRYSTAL WAFER INTERFACIAL OXIDE-GROWTH AND FILLING-UP BEHAVIOR OF THE MICRO-GAP IN SILICON FUSION BONDING PROCESSES Article 10.1007/BF01191948 1 JOURNAL OF MATERIALS SCIENCE, v.28, no.5, pp.1168 - 1174 JOURNAL OF MATERIALS SCIENCE 28 5 1168 1174 scie scopus A1993KR34600006 2-s2.0-0027558833 Materials Science, Multidisciplinary Materials Science Article PRESSURE SENSORS ON-INSULATOR SINGLE-CRYSTAL WAFER micromachining direct bonding interfacial oxide