KIM, TW YOM, SS KANG, WN YOON, YS KIM, C KIM, S YANG, IS WEE, YJ 2024-01-21T22:35:52Z 2024-01-21T22:35:52Z 2022-01-10 1993-03 0169-4332 https://pubs.kist.re.kr/handle/201004/146099 Al2O3 films were grown by metalorganic chemical vapor deposition on p-Si(100) orientation substrates using Al(OC3H7)3 and N2O via pyrolysis. Raman spectroscopy showed the optical phonon modes of the Al2O3/Si structure. The stoichiometry of the Al2O3 film was observed by Auger electron spectroscopy. Capacitance-voltage measurements clearly showed metal-insulator-semiconductor behaviors for the Al/Al2O3/Si diodes with the Al2O3 insulator gate, and the interface state densities at the Al2O3/Si interface were approximately 10(11) eV cm-2 at the middle of the Si energy gap. These results indicate that Al2O3 films on Si have potential applications as insulator films. English ELSEVIER SCIENCE BV CU STRUCTURAL AND ELECTRICAL-PROPERTIES OF AL2O3 THIN-FILMS ON P-SI GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION Article 10.1016/0169-4332(93)90768-7 1 APPLIED SURFACE SCIENCE, v.65-6, pp.854 - 857 APPLIED SURFACE SCIENCE 65-6 854 857 scie scopus A1993KW45800144 2-s2.0-0242402612 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article; Proceedings Paper CU thin films Al//2O//3 MOCVD