Kim, Y. Kim, M.-S. Min, S.-K. 2024-01-21T22:37:00Z 2024-01-21T22:37:00Z 2022-01-10 1993-02 0003-6951 https://pubs.kist.re.kr/handle/201004/146118 We have investigated the properties of center and edge δ-doped GaAs-AlGaAs quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) by means of capacitance voltage (C-V) profiling and temperature-dependent photoluminescence (PL) measurements. For the center δ-doped quantum well, a narrow C-V profile and the Fermi-edge singularity in PL have been confirmed. In contrast, for edge δ-doped quantum wells, a double-peaked C-V profile and a sharp luminescence enhancement near the Fermi level which is not due to the Fermi-edge singularity, have been observed. The results are explained by a simple model based on the asymmetrical potential well induced by the band bending due to the δ-doping at one side of the heterointerfaces. English Properties of center and edge δ-doped GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition Article 10.1063/1.108856 1 Applied Physics Letters, v.62, no.7, pp.741 - 743 Applied Physics Letters 62 7 741 743 scopus 2-s2.0-0001184034 Article delta-doping quantum well MOCVD