LEE, MB HAN, IK LEE, YJ LEE, JI KANG, KN LIM, H 2024-01-21T22:37:15Z 2024-01-21T22:37:15Z 2022-01-11 1993-01-15 0261-8028 https://pubs.kist.re.kr/handle/201004/146122 English CHAPMAN HALL LTD FIELD-EFFECT TRANSISTORS INTERFACE TRAPS DEPOSITION TEMPERATURE-DEPENDENCE OF ELECTRICAL INSTABILITY IN AN INP METAL-INSULATOR SEMICONDUCTOR CAPACITOR PROVIDED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE Article 1 JOURNAL OF MATERIALS SCIENCE LETTERS, v.12, no.2, pp.90 - 91 JOURNAL OF MATERIALS SCIENCE LETTERS 12 2 90 91 scie scopus A1993KM81900009 2-s2.0-0027149058 Materials Science, Multidisciplinary Materials Science Article FIELD-EFFECT TRANSISTORS INTERFACE TRAPS