KIM, TW KIM, Y KIM, MS KIM, EK MIN, SK 2024-01-21T23:04:08Z 2024-01-21T23:04:08Z 2022-01-10 1992-12 0038-1098 https://pubs.kist.re.kr/handle/201004/146348 Shubnikov-de Haas and Van der Pauw Hall effect measurements at 1.5 K have been carried out to investigate the existence of a two-dimensional electron gas and to determine subband energies in Si-delta-doped GaAs grown by atmospheric pressure metalorganic chemical vapor deposition. The Shubnikov-de Haas measurements clearly show multiple oscillation periods, which vary dramatically with the angle between the magnetic field and the normal to the sample surface, indicative of the occupation of several subbands by quasi-two-dimensional electrons in a potential well. With the magnetic field in the plane of the interface, magnetoresistance oscillations are also clearly observed that are not periodic in the reciprocal of the magnetic field. Using these experimental results and a self-consistent numerical method which took into account the exchange-correlation effects, the electric subband energies were also determined. English PERGAMON-ELSEVIER SCIENCE LTD DOPING LAYER MOBILITY FIELD FET ELECTRIC SUBBANDS IN SI-DELTA-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION Article 10.1016/0038-1098(92)90700-J 1 SOLID STATE COMMUNICATIONS, v.84, no.12, pp.1133 - 1136 SOLID STATE COMMUNICATIONS 84 12 1133 1136 scie scopus A1992KF79300012 2-s2.0-0026997664 Physics, Condensed Matter Physics Article DOPING LAYER MOBILITY FIELD FET delta-doping MOCVD GaAs